Metalorganic vapour phase epitaxy

Results: 41



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11Kinematic Analysis of a Space Mechanism—Rendezvous Simulator

Kinematic Analysis of a Space Mechanism—Rendezvous Simulator

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Source URL: www.abhinavjournal.com

Language: English - Date: 2013-12-17 06:28:40
12Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111

Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111

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Source URL: www.oaresearch.co.uk

Language: English - Date: 2015-04-23 17:42:57
13Microsoft Word - IEEE_38_Si-Ge-hydrogen.doc

Microsoft Word - IEEE_38_Si-Ge-hydrogen.doc

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Source URL: www.quantsol.org

Language: English - Date: 2012-03-04 05:35:04
14Microsoft Word - Hannappel et al

Microsoft Word - Hannappel et al

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Source URL: www.quantsol.org

Language: English - Date: 2014-02-15 13:17:10
15Microsoft Word - Hannappel-quantsol2010.doc

Microsoft Word - Hannappel-quantsol2010.doc

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Source URL: www.quantsol.org

Language: English - Date: 2011-03-17 17:05:24
16doi:S0961

doi:S0961

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Source URL: www.eee.hku.hk

Language: English - Date: 2008-01-18 01:04:59
17THOMAS F. KUECH UW-Foundation Chair Beckwith-Bascom Professor Milton J. and A. Maude Shoemaker Professor of Chemical Engineering Member of the National Academy of Engineering University of Wisconsin-Madison Department of

THOMAS F. KUECH UW-Foundation Chair Beckwith-Bascom Professor Milton J. and A. Maude Shoemaker Professor of Chemical Engineering Member of the National Academy of Engineering University of Wisconsin-Madison Department of

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Source URL: provost.wisc.edu

Language: English - Date: 2015-04-14 12:23:20
18CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-02-27 11:00:15
1990 Technology focus: GaN HEMTs  Reducing gate leakage and current collapse in GaN HEMTs on silicon UK research team combines sulfuric acid treatment and silicon nitride

90 Technology focus: GaN HEMTs Reducing gate leakage and current collapse in GaN HEMTs on silicon UK research team combines sulfuric acid treatment and silicon nitride

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-04-08 17:14:49
20CS_ad_213x282mm_semiconductor_today_feb14.indd

CS_ad_213x282mm_semiconductor_today_feb14.indd

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Source URL: www.semiconductor-today.com

Language: English - Date: 2015-01-23 09:11:18